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 (R)
STPS1H100
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS

1A 100 V 175C 0.62 V SMA (JEDEC DO-214AC) STPS1H100A SMB (JEDEC DO-214AA) STPS1H100U
Negligible switching losses High junction temperature capability Low leakage cuurent Good trade-off between leakage current and forward voltage drop Avalanche capability specified
DESCRIPTION Schottky rectifiers designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in SMA or SMB.
Table 2: Order Codes Part Number STPS1H100A STPS1H100U
Marking S11 G11
Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 160C = 0.5 tp = 10ms sinusoidal tp = 2s F = 1kHz square tp = 100s square tp = 1s Tj = 25C Value 100 10 1 50 1 1 1500 -65 to + 175 175 10000 Unit V A A A A A W C C V/s
dPt ot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j - a )
August 2004
REV. 5
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STPS1H100
Table 4: Thermal Resistance Symbol Rth(j-l) Junction to lead Parameter SMA SMB Value 30 25 Unit C/W
Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25C VR = VRRM Reverse leakage current Tj = 125C Tj = 25C VF ** Forward voltage drop Tj = 125C Tj = 25C Tj = 125C
Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.08 IF (RMS) * tp = 5 ms, < 2%
Parameter
Min.
Typ 0.2 0.58 0.65
Max. 4 0.5 0.77 0.62 0.86 0.7
Unit A mA
IF = 1A IF = 2A
V
2
Figure 1: Average forward power dissipation versus average forward current
PF(AV)(W)
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Figure 2: Average forward current versus ambient temperature ( = 0.5)
IF(AV)(A)
1.2
= 0.05
= 0.1
= 0.2
= 0.5
1.0
Rth(j-a)=Rth(j-I)
=1
0.8
Rth(j-a)=120C/W
0.6
Rth(j-a)=100C/W
T
0.4
T
0.2
IF(AV)(A)
=tp/T
1.0 1.1
tp
1.2
0.0 0
=tp/T
20
tp
40 60
Tamb(C)
80 100 120 140 160 180
Figure 3: Normalized avalanche derating versus pulse duration
PARM(tp) PARM(1s)
1
power
Figure 4: Normalized avalanche derating versus junction temperature
PARM(tp) PARM(25C)
1.2 1
power
0.1
0.8 0.6
0.01
0.4 0.2
0.001 0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 25 50 75 100 125 150
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STPS1H100
Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)
IM(A)
8 7 6 5 4 3 2 1 0 1E-3
IM t
Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB)
IM(A)
10 9 8 7
Ta=25C
6 5 4 3
Ta=25C
Ta=75C
Ta=75C
Ta=110C
2 1
IM t
Ta=110C
=0.5
t(s)
1E-2 1E-1 1E+0
=0.5
t(s)
1E-2 1E-1 1E+0
0 1E-3
Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA)
Zth(j-c)/Rth(j-c)
1.00
= 0.5
Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMB)
Zth(j-c)/Rth(j-c)
1.00
= 0.5
= 0.2 = 0.1
= 0.2 = 0.1
0.10
0.10
Single pulse Single pulse
T
T
0.01 1E-3
tp(s)
1E-2 1E-1 1E+0 1E+1
=tp/T
1E+2
tp
5E+2
tp(s)
0.01 1E-3 1E-2 1E-1 1E+0 1E+1
=tp/T
1E+2
tp
5E+2
Figure 9: Reverse leakage current versus reverse voltage applied (typical values)
IR(A)
2E+2 1E+2
Figure 10: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
100
Tj=125C
F=1MHz Tj=25C
1E+1 50 1E+0
1E-1 20
Tj=25C
1E-2
VR(V)
1E-3 0 10 20 30 40 50 60 70 80 90 100 10 1
VR(V)
10 100
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STPS1H100
Figure 11: Forward voltage drop versus forward current (maximum values)
Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMA)
Rth(j-a)(C/W)
140 130 120 110
IFM(A)
2E+1 1E+1
Tj=125C Tj=25C
100 90 80 70 60 50 40 30 20 0.0 0.5 1.0 1.5
1E+0
1E-1
VFM(V)
1E-2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
S(Cu)(cm)
2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMB)
Rth(j-a)(C/W)
120 110 100 90 80 70 60 50 40 30 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(Cu)(cm)
4/7
STPS1H100
Figure 14: SMA Package Mechanical Data DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60
Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063
D
A1 A2 b
1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75
E
c
A1
E E1
b
C L
A2
D L
Figure 15: SMA Foot Print Dimensions (in millimeters)
1.65
1.45
2.40
1.45
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STPS1H100
Figure 16: SMB Package Mechanical Data DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
D
A1 A2 b
1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75
E
c
A1
E E1
b
C L
A2
D L
Figure 17: SMB Foot Print Dimensions (in millimeters)
2.3
1.52
2.75
1.52
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STPS1H100
Table 6: Ordering Information Ordering type STPS1H100A STPS1H100U

Marking S11 G11
Package SMA SMB
Weight 0.068 g 0.107 g
Base qty 5000 2500
Delivery mode Tape & reel Tape & reel
Band indicates cathode Epoxy meets UL94, V0
Table 7: Revision History Date Jul-2003 Aug-2004 Revision 4A 5 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080).
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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